New Theoretical Model to Describe Carrier Multiplication in Semiconductors: Explanation of Disparate Efficiency in MoTe2 versus PbS and PbSe.

We present a theoretical model to compute the efficiency of the generation of two or more electron-hole pairs in a semiconductor by the absorption of one photon via the process of carrier multiplication (CM). The photogeneration quantum yield of electron-hole pairs is calculated from the number of possible CM decay pathways of the electron and the hole. We apply our model to investigate the underlying cause of the high efficiency of CM in bulk 2H-MoTe2, as compared to bulk PbS and PbSe. Electronic band structures were calculated with density functional theory, from which the number of possible CM decay pathways was calculated for all initial electron and hole states that can be produced at a given photon energy. The variation of the number of CM pathways with photon energy reflects the dependence of experimental CM quantum yields on the photon energy and material composition. We quantitatively reproduce experimental CM quantum yields for MoTe2, PbS, and PbSe from the calculated number of CM pathways and one adjustable fit parameter. This parameter is related to the ratio of Coulomb coupling matrix elements and the cooling rate of the electrons and holes. Large variations of this fit parameter result in small changes in the modeled quantum yield for MoTe2, which confirms that its high CM efficiency can be mainly attributed to its extraordinary large number of CM pathways. The methodology of this work can be applied to analyze or predict the CM efficiency of other materials.

Stacking-Order-Dependent Excitonic Properties Reveal Interlayer Interactions in Bulk ReS2.

Rhenium disulfide, a member of the transition metal dichalcogenide family of semiconducting materials, is unique among 2D van der Waals materials due to its anisotropy and, albeit weak, interlayer interactions, confining excitons within single atomic layers and leading to monolayer-like excitonic properties even in bulk crystals. While recent work has established the existence of two stacking modes in bulk, AA and AB, the influence of the different interlayer coupling on the excitonic properties has been poorly explored. Here, we use polarization-dependent optical measurements to elucidate the nature of excitons in AA and AB-stacked rhenium disulfide to obtain insight into the effect of interlayer interactions. We combine polarization-dependent Raman with low-temperature photoluminescence and reflection spectroscopy to show that, while the similar polarization dependence of both stacking orders indicates similar excitonic alignments within the crystal planes, differences in peak width, position, and degree of anisotropy reveal a different degree of interlayer coupling. DFT calculations confirm the very similar band structure of the two stacking orders while revealing a change of the spin-split states at the top of the valence band to possibly underlie their different exciton binding energies. These results suggest that the excitonic properties are largely determined by in-plane interactions, however, strongly modified by the interlayer coupling. These modifications are stronger than those in other 2D semiconductors, making ReS2 an excellent platform for investigating stacking as a tuning parameter for 2D materials. Furthermore, the optical anisotropy makes this material an interesting candidate for polarization-sensitive applications such as photodetectors and polarimetry.

Microscopic Proof of Photoluminescence from Mechanochemically Synthesized 1-Octene-Capped Quantum-Confined Silicon Nanoparticles: Implications for Light-Emission Applications.

Silicon nanoparticles (SiNPs) have been explored intensively for their use in applications requiring efficient fluorescence for LEDs, lasers, displays, photovoltaic spectral-shifting filters, and biomedical applications. High radiative rates are essential for such applications, and theoretically these could be achieved via quantum confinement and/or straining. Wet-chemical methods used to synthesize SiNPs are under scrutiny because of reported contamination by fluorescent carbon species. To develop a cleaner method, we utilize a specially designed attritor type high-energy ball-mill and use a high-purity (99.999%) Si microparticle precursor. The mechanochemical process is used under a continuous nitrogen gas atmosphere to avoid oxidation of the particles. We confirm the presence of quantum-confined NPs (<5 nm) using atomic force microscopy (AFM). Microphotoluminescence (PL) spectroscopy coupled to AFM confirms quantum-confined tunable red/near-infrared PL emission in SiNPs capped with an organic ligand (1-octene). Using micro-Raman-PL spectroscopy, we confirm SiNPs as the origin of the emission. These results demonstrate a facile and potentially scalable mechanochemical method of synthesis for contamination-free SiNPs.

Electronic Coupling of Highly Ordered Perovskite Nanocrystals in Supercrystals.

Assembled perovskite nanocrystals (NCs), known as supercrystals (SCs), can have many exotic optical and electronic properties different from the individual NCs due to energy transfer and electronic coupling in the dense superstructures. We investigate the optical properties and ultrafast carrier dynamics of highly ordered SCs and the dispersed NCs by absorption, photoluminescence (PL), and femtosecond transient absorption (TA) spectroscopy to determine the influence of the assembly on the excitonic properties. Next to a red shift of absorption and PL peak with respect to the individual NCs, we identify signatures of the collective band-like states in the SCs. A smaller Stokes shift, decreased biexciton binding energy, and increased carrier cooling rates support the formation of delocalized states as a result of the coupling between the individual NC states. These results open perspectives for assembled perovskite NCs for application in optoelectronic devices, with design opportunities exceeding the level of NCs and bulk materials.

Effects of the Structure and Temperature on the Nature of Excitons in the Mo0.6W0.4S2 Alloy.

We studied the nature of excitons in the transition metal dichalcogenide alloy Mo0.6W0.4S2 compared to pure MoS2 and WS2 grown by atomic layer deposition (ALD). For this, optical absorption/transmission spectroscopy and time-dependent density functional theory (TDDFT) were used. The effects of temperature on A and B exciton peak energies and line widths in optical transmission spectra were compared between the alloy and pure MoS2 and WS2. On increasing the temperature from 25 to 293 K, the energy of the A and B exciton peaks decreases, while their line width increases due to exciton-phonon interactions. The exciton-phonon interactions in the alloy are closer to those for MoS2 than those for WS2. This suggests that exciton wave functions in the alloy have a larger amplitude on Mo atoms than that on W atoms. The experimental absorption spectra could be reproduced by TDDFT calculations. Interestingly, for the alloy, the Mo and W atoms had to be distributed over all layers. Conversely, we could not reproduce the experimental alloy spectrum by calculations on a structure with alternating layers, in which every other layer contains only Mo atoms and the layers in between also contain W atoms. For the latter atomic arrangement, the TDDFT calculations yielded an additional optical absorption peak that could be due to excitons with some charge transfer character. From these results, we conclude that ALD yields an alloy in which Mo and W atoms are distributed uniformly among all layers.

Photon Recycling in CsPbBr3 All-Inorganic Perovskite Nanocrystals.

Photon recycling, the iterative process of re-absorption and re-emission of photons in an absorbing medium, can play an important role in the power-conversion efficiency of photovoltaic cells. To date, several studies have proposed that this process may occur in bulk or thin films of inorganic lead-halide perovskites, but conclusive proof of the occurrence and magnitude of this effect is missing. Here, we provide clear evidence and quantitative estimation of photon recycling in CsPbBr3 nanocrystal suspensions by combining measurements of steady-state and time-resolved photoluminescence (PL) and PL quantum yield with simulations of photon diffusion through the suspension. The steady-state PL shows clear spectral modifications including red shifts and quantum yield decrease, while the time-resolved measurements show prolonged PL decay and rise times. These effects grow as the nanocrystal concentration and distance traveled through the suspension increase. Monte Carlo simulations of photons diffusing through the medium and exhibiting absorption and re-emission account quantitatively for the observed trends and show that up to five re-emission cycles are involved. We thus identify 4 quantifiable measures, PL red shift, PL QY, PL decay time, and PL rise time that together all point toward repeated, energy-directed radiative transfer between nanocrystals. These results highlight the importance of photon recycling for both optical properties and photovoltaic applications of inorganic perovskite nanocrystals.

Band-Gap Tunability in Partially Amorphous Silicon Nanoparticles Using Single-Dot Correlative Microscopy.

Silicon nanoparticles (Si-NPs) represent one of many types of nanomaterials, where the origin of emission is difficult to assess due to a complex interplay between the core and surface chemistry. Band-gap tunability in Si-NPs is predicted to span from the infrared to the ultraviolet spectral range, which is rarely observed in practice. In this work, we directly assess the size dependence of the optical band gap using a single-dot correlative microscopy tool, where the size of the individual NPs is measured using atomic force microscopy (AFM) and the optical band gap is evaluated from single-dot photoluminescence measured on the very same NPs. We analyze 2-8 nm alkyl-capped Si-NPs prepared by a sol-gel method, followed by annealing at 1300 °C. Surprisingly, we find that the optical band gap is given by the amorphous shell, as evidenced by the convergence of the optical band gap size dependence toward the amorphous Si band gap of ∼1.56 eV. We propose that the structural disorder might be the reason behind the often reported limited emission tunability from various Si-NPs in the literature. We believe that our message points toward a pressing need for development and broader use of such direct correlative single-dot microscopy methods to avoid possible misinterpretations that could arise from attempts to recover size-band gap relation from ensemble methods, as practiced nowadays.